模拟集成威廉希尔官方网站 设计下载pdf

模拟集成威廉希尔官方网站 设计下载pdf

CHAPTER 1
Models for Integrated-Circuit Active
Devices 1
1.1 Introduction 1
1.2 Depletion Region of a pn Junction 1
1.2.1 Depletion-RegionCapacitance 5
1.2.2 Junction Breakdown 6
1.3 Large-Signal Behavior of Bipolar Transistors 8
1.3.1 Large-Signal Models in the Forward-Active Region 9
1.3.2 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region 14
1.3.3 Saturation and Inverse Active Regions 16
1.3.4 Transistor Breakdown Voltages 20
1.3.5 Dependence of Transistor Current Gain/3r on Operating Conditions 23
1.4 Small-Signal Models of Bipolar Transistors 26
1.4.1 Transconductance 27
1.4.2 Base-ChargingCapacitance 28
1.4.3 Input Resistance 29
1.4.4 Output Resistance 29
1.4.5 Basic Small-Signal Model of the Bipolar Transistor 30

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