您好,我从Microchip网站上已经有了CykDeCe88yRTSPWorddWrad示例。在研究了这个演示后,我想使用DSPICTSPAPI API和RTSPAPI API来使用DSPIC33 EP设备NVM来使用。/ /读取页面并将数据放入Page MeReRoBuf数组TEMP= Flash Page Read(NVMADRU,NVMADRPGEAR,Page)//修改Page MeReRoBuf数组TEMP= Flash Page MyDyFy(NVMROW,NVMSIZE,MyRoDATAILAM,Page Error BuffFF);/ /在Flash TEMP= Flash Page(NVMADRU,NVMADRPage对齐)中擦除页面;/ /用修改数据TEMP= Flash Page编写程序(NVMADRU,NVMADRPGEAR对齐,Page MeReBufff)无法理解如下:如何选择DSPIC33 EP32 MC202中的特定记忆?下面的PIC32 MXDSPIC33 EP如下?请更新我……TS9
以上来自于百度翻译
以下为原文
Hi,
I have checked
ce478_rtsp_word_write example from Microchip website.After study this demo I think
rtsp_api.h and
rtsp_api.s is necessary to work with dsPIC33EP Devices NVM to use .
// Read the page and place the data into pageMirrorBuf array
temp = FlashPageRead( nvmAdru, nvmAdrPageAligned, pageMirrorBuff );
// Modify the pageMirrorBuf array
temp = FlashPageModify( nvmRow, nvmSize, myRowDataInRam, pageMirrorBuff );
// Erase the page in Flash
temp = FlashPageErase( nvmAdru, nvmAdrPageAligned );
// Program the page with modified data
temp = FlashPageWrite( nvmAdru, nvmAdrPageAligned, pageMirrorBuff );
Unable to understood as below:
nvmAdru = __builtin_tblpage(
&myRowData1InFlash[0] );
nvmAdr = __builtin_tbloffset(
&myRowData1InFlash[0] );
nvmAdrPageAligned = nvmAdr & 0xF800; // Get the Flash Page Aligned address
nvmRow = ( (nvmAdr >> 7) & 7 ); // Row in the page
nvmSize = 128;
nvmOffset = 8;
How to chose specific memory in dsPIC33EP32MC202 ?
As below for PIC32MX
#define ROMDATA1_ADDR 0x9d008000
#define NVM_PAGE_SIZE 4096
const uint16_t __attribute__ ((space(prog), address(ROMDATA1_ADDR))) RomData1[NVM_PAGE_SIZE];
dsPIC33EP is like below ?
uint16_t myRowData1InFlash[] __attribute__( (space(prog), address(0x1000)) ) ={......} // Long Array
Please update me ..
--
TS9
您好,我从Microchip网站上已经有了CykDeCe88yRTSPWorddWrad示例。在研究了这个演示后,我想使用DSPICTSPAPI API和RTSPAPI API来使用DSPIC33 EP设备NVM来使用。/ /读取页面并将数据放入Page MeReRoBuf数组TEMP= Flash Page Read(NVMADRU,NVMADRPGEAR,Page)//修改Page MeReRoBuf数组TEMP= Flash Page MyDyFy(NVMROW,NVMSIZE,MyRoDATAILAM,Page Error BuffFF);/ /在Flash TEMP= Flash Page(NVMADRU,NVMADRPage对齐)中擦除页面;/ /用修改数据TEMP= Flash Page编写程序(NVMADRU,NVMADRPGEAR对齐,Page MeReBufff)无法理解如下:如何选择DSPIC33 EP32 MC202中的特定记忆?下面的PIC32 MXDSPIC33 EP如下?请更新我……TS9
以上来自于百度翻译
以下为原文
Hi,
I have checked
ce478_rtsp_word_write example from Microchip website.After study this demo I think
rtsp_api.h and
rtsp_api.s is necessary to work with dsPIC33EP Devices NVM to use .
// Read the page and place the data into pageMirrorBuf array
temp = FlashPageRead( nvmAdru, nvmAdrPageAligned, pageMirrorBuff );
// Modify the pageMirrorBuf array
temp = FlashPageModify( nvmRow, nvmSize, myRowDataInRam, pageMirrorBuff );
// Erase the page in Flash
temp = FlashPageErase( nvmAdru, nvmAdrPageAligned );
// Program the page with modified data
temp = FlashPageWrite( nvmAdru, nvmAdrPageAligned, pageMirrorBuff );
Unable to understood as below:
nvmAdru = __builtin_tblpage(
&myRowData1InFlash[0] );
nvmAdr = __builtin_tbloffset(
&myRowData1InFlash[0] );
nvmAdrPageAligned = nvmAdr & 0xF800; // Get the Flash Page Aligned address
nvmRow = ( (nvmAdr >> 7) & 7 ); // Row in the page
nvmSize = 128;
nvmOffset = 8;
How to chose specific memory in dsPIC33EP32MC202 ?
As below for PIC32MX
#define ROMDATA1_ADDR 0x9d008000
#define NVM_PAGE_SIZE 4096
const uint16_t __attribute__ ((space(prog), address(ROMDATA1_ADDR))) RomData1[NVM_PAGE_SIZE];
dsPIC33EP is like below ?
uint16_t myRowData1InFlash[] __attribute__( (space(prog), address(0x1000)) ) ={......} // Long Array
Please update me ..
--
TS9
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