The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. • Input threshold current: IF=5mA(max.) • Supply current (ICC): 11mA(max.) • Supply voltage (VCC): 10−35V • Output current (IO): ±1.5A (max.) • Switching time (tpLH/tpHL): 1.5μs(max.) • Isolation voltage: 2500Vrms(min.) • UL recognized: UL1577, file No.E67349 • Option (D4) type VDE approved: DIN VDE0884/06.92,certificate No.76823 Maximum operating insulation voltage: 630VPK Highest permissible over voltage: 4000VPK